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| PD - 94735 HEXFET(R) Power MOSFET l l l l l l l IRL3803VS IRL3803VL VDSS = 30V Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3803VS) Low-profile through-hole (IRL3803VL) 175C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 5.5m G S ID = 140A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D2Pak IRL3803VS TO-262 IRL3803VL Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 140 110 470 3.8 200 1.4 16 71 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V A mJ V/ns Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mounted, steady state) Typ. --- --- Max. 0.74 40 Units C/W www.irf.com 1 07/21/03 IRL3803VS/IRL3803VL Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Min. 30 --- --- --- 1.0 82 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 5.5 VGS = 10V, ID = 71A m 7.5 VGS = 4.5V, ID = 59A --- V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 71A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 100 VGS = 16V nA -100 VGS = -16V 76 ID = 71A 19 nC VDS = 24V 35 VGS = 4.5V, See Fig. 6 and 13 --- VDD = 15V --- ID = 71A --- RG = 1.3 --- VGS = 4.5V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3720 --- VGS = 0V 1480 --- VDS = 25V 270 --- pF = 1.0MHz, See Fig. 5 1560400 mJ IAS = 71A, L = 0.16mH Typ. --- 0.028 --- --- --- --- --- --- --- --- --- --- --- 16 180 29 37 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 140 showing the A G integral reverse --- --- 470 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = 71A, VGS = 0V --- 52 78 ns TJ = 25C, IF = 71A --- 91 140 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 160H RG = 25, IAS = 71A, VGS=10V (See Figure 12) ISD 71A, di/dt 110A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Uses IRL3803 data and test conditions. This is applied to D2Pak, when mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRL3803VS/IRL3803VL 1000 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 1000 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 100 100 2.7V 2.7V 10 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 10 0.1 20s PULSE WIDTH TJ = 175 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 TJ = 25 C TJ = 175 C 100 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 120A I D , Drain-to-Source Current (A) 2.0 1.5 1.0 0.5 10 2.5 V DS = 15V 20s PULSE WIDTH 3.5 4.5 5.5 6.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL3803VS/IRL3803VL 6000 5000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = 71A VDS = 24V VDS = 15V 12 C, Capacitance (pF) 4000 Ciss 9 3000 2000 Coss 6 1000 3 Crss 0 1 10 100 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 100 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 175 C ISD , Reverse Drain Current (A) 100 10 ID, Drain-to-Source Current (A) 1000 100 100sec 1msec TJ = 25 C 1 10 Tc = 25C Tj = 175C Single Pulse 1 10 VDS , Drain-toSource Voltage (V) 10msec 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 2.4 1 VSD ,Source-to-Drain Voltage (V) 100 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL3803VS/IRL3803VL 160 LIMITED BY PACKAGE VDS VGS RD ID , Drain Current (A) 120 RG V GS Pulse Width 1 s Duty Factor 0.1 % D.U.T. + -VDD 80 40 Fig 10a. Switching Time Test Circuit VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL3803VS/IRL3803VL 15V EAS , Single Pulse Avalanche Energy (mJ) 1000 TOP 800 VDS L DRIVER BOTTOM ID 29A 50A 71A RG 20V D.U.T IAS tp + V - DD 600 A 0.01 400 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL3803VS/IRL3803VL Peak Diode Recovery dv/dt Test Circuit D.U.T* + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs www.irf.com 7 IRL3803VS/IRL3803VL D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L 8 www.irf.com IRL3803VS/IRL3803VL TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com 9 IRL3803VS/IRL3803VL D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/03 10 www.irf.com |
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